Nanoscale optical and structural characterisation of silk

• Meguya Ryu,
• Reo Honda,
• Adrian Cernescu,
• Arturas Vailionis,
• Armandas Balčytis,
• Jitraporn Vongsvivut,
• Jing-Liang Li,
• Denver P. Linklater,
• Elena P. Ivanova,
• Vygantas Mizeikis,
• Mark J. Tobin,
• Junko Morikawa and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2019, 10, 922–929, doi:10.3762/bjnano.10.93

• . Spectral positioning of the absorption peak and dispersion line shapes corresponded to the expected Lorentzian behavior of a damped oscillator. Next, direct absorbance and orientation mapping [22] through a 100 nm thick silk slice was demonstrated using synchrotron IR radiation (Figure 6). By measuring the

Towards 3D crystal orientation reconstruction using automated crystal orientation mapping transmission electron microscopy (ACOM-TEM)

• Aaron Kobler and
• Christian Kübel

Beilstein J. Nanotechnol. 2018, 9, 602–607, doi:10.3762/bjnano.9.56

• the help of a dedicated TEM tomography sample holder is an accurate 3D reconstruction of the TEM lamella currently possible. 2D crystal orientation mapping has become a standard method for crystal orientation and phase determination while 3D crystal orientation mapping have been reported only a few

• times. The combination of in situ testing with 3D crystal orientation mapping remains a challenge in terms of stability and accuracy. Here, we outline a method to 3D reconstruct the crystal orientation from a superimposed diffraction pattern of overlapping crystals without sample tilt. Avoiding the

• [15][16][17][24], XRD- and TEM-tomography require a sample tilt series for the 3D reconstruction [10][11][20][25][26]. Crystal orientation mapping has become a standard method for crystal orientation and phase determination. However, 3D crystal orientation mapping remains challenging and has been

In situ observation of deformation processes in nanocrystalline face-centered cubic metals

• Aaron Kobler,
• Christian Brandl,
• Horst Hahn and
• Christian Kübel

Beilstein J. Nanotechnol. 2016, 7, 572–580, doi:10.3762/bjnano.7.50

• -Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany 10.3762/bjnano.7.50 Abstract The atomistic mechanisms active during plastic deformation of nanocrystalline metals are still a subject of controversy. The recently developed approach of combining automated crystal orientation mapping (ACOM) and in

• metals are beyond the spatial resolution limits of EBSD (>20 nm) [36]. Here, we demonstrate a combination of automated crystal orientation mapping (ACOM) in scanning TEM (STEM) modus with in situ straining [37][38][39] of NC metals to follow the GB-mediated processes (GB sliding and grain growth) and

• rupture of the film. In conclusion, conventional deformation mechanisms are still active in nanocrystalline metals but with different weighting as compared with conventional materials with coarser grains. Keywords: ACOM-STEM; deformation mechanisms; in situ straining; nanocrystalline metals; orientation

Deformation-induced grain growth and twinning in nanocrystalline palladium thin films

• Aaron Kobler,
• Jochen Lohmiller,
• Jonathan Schäfer,
• Michael Kerber,
• Anna Castrup,
• Ankush Kashiwar,
• Patric A. Gruber,
• Karsten Albe,
• Horst Hahn and
• Christian Kübel

Beilstein J. Nanotechnol. 2013, 4, 554–566, doi:10.3762/bjnano.4.64

• deformation processes in the material, several samples were strained to defined straining states, up to a maximum engineering strain of 10%, and prepared for post-mortem analysis. The nanocrystalline structure was investigated by quantitative automated crystal orientation mapping (ACOM) in a transmission

• active in ncPd films deposited by magnetron sputtering onto compliant substrates. The microstructural analysis is mainly performed by quantitative automated crystal orientation mapping TEM (ACOM-TEM) [23][24] and supplemented with grain size measurement using dark-field TEM (DF-TEM) and conventional X

Channeling in helium ion microscopy: Mapping of crystal orientation

• Vasilisa Veligura,
• Gregor Hlawacek,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 501–506, doi:10.3762/bjnano.3.57

• of incidence of the beam is used to perform crystal orientation mapping. This procedure provides information that is comparable to electron backscatter diffraction (EBSD). We also show that a fully fledged scattering calculation is not necessary to access this information. Simple geometric

• contrast in the SE images. Orientation mapping with channeling The results that we have presented demonstrate that it is possible to obtain crystallographic information directly from SE images in HIM. This information is also accessible from BSHe images; however, the usage of SE has several advantages